Search results for "light-emitting device"
showing 7 items of 7 documents
Photonic-crystal silicon-nanocluster light-emitting device
2006
We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integ…
Electroluminescence and transport properties in amorphous silicon nanostructures
2006
We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend …
Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices
2006
The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.
Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters
2006
In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…
Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration
2014
Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of oth…
Efficient deep-red light-emitting electrochemical cells based on a perylenediimide-iridium-complex dyad
2009
A two-layer light-emitting electrochemical cell device based on a new perylenediimide-iridium-complex dyad is presented emitting in the deep-red region with high external quantum efficiencies (3.27%). Costa Riquelme, Ruben Dario, Ruben.Costa@uv.es ; Orti Guillen, Enrique, Enrique.Orti@uv.es ; Bolink, Henk, Henk.Bolink@uv.es ; Gierschner, Johannes, Johannes.Gierschner@uv.es
State of the art and prospects for halide perovskite nanocrystals
2021
Financiado para publicación en acceso aberto: Universidade de Vigo/CISUG Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of …